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Graphene transfer methods for high quality graphene field effect transistors
Tesař, Jan ; Kormoš, Lukáš (referee) ; Procházka, Pavel (advisor)
This bachelor thesis is focused on the influence of different graphene transfer methods on its quality. Graphene layers were grown by Chemical Vapour Deposition (CVD) method. The quality characterization of subsequently transfered graphene is based on the measurement of charge carrier mobility which has been performed on the field-effect transistors fabricated by transferring of graphene layers onto Si/SiO$_2$ surface. Chemical etching and electrolytic delamination are the transfer methods that are being compared in this thesis. Results of the measurements showed that graphene layers transferred by electrolytic delamination exhibit approximately four times higher charge carrier mobility than those transferred by the chemical etching method.
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Electronic effects at the interface between biomolecules, cells and diamond
Krátká, Marie ; Rezek, Bohuslav (advisor) ; Cifra, Michal (referee) ; Skládal, Petr (referee)
Understanding and control of interactions between biological environment (cells, proteins, tissues, membranes, electrolytes, etc.) and solid-state surfaces is fundamental for biomedical applications such as bio-sensors, bio-electronics, tissue engineering and implant materials as well as for environmental monitoring, security and other fields. Diamond can provide unique combination of semiconducting, chemical, optical, biocompatible and other properties for this purpose. In this thesis we characterize electronic properties of protein-diamond interface by employing a solution-gated field-effect transistor (SGFET) based on hydrogen-terminated diamond, surface of which is exposed to biological media. We elucidate the role of adsorbed protein layer on the electronic response of the diamond transistor. We investigate effects of cells (using mainly osteoblast cells as model) on diamond SGFETs transfer characteristics and gate currents. We employ nanocrystalline diamond (NCD) thin films of different grain sizes (80 - 250 nm) to characterize and discuss influence of grain boundaries and sp2 phase on bio- electronic function of SGFETs. We investigate effects of gamma irradiation on function and stability of hydrogen-terminated diamond SGFETs interfaced with proteins and cells, showing feasibility of...
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Electronic effects at the interface between biomolecules, cells and diamond
Krátká, Marie ; Rezek, Bohuslav (advisor) ; Cifra, Michal (referee) ; Skládal, Petr (referee)
Understanding and control of interactions between biological environment (cells, proteins, tissues, membranes, electrolytes, etc.) and solid-state surfaces is fundamental for biomedical applications such as bio-sensors, bio-electronics, tissue engineering and implant materials as well as for environmental monitoring, security and other fields. Diamond can provide unique combination of semiconducting, chemical, optical, biocompatible and other properties for this purpose. In this thesis we characterize electronic properties of protein-diamond interface by employing a solution-gated field-effect transistor (SGFET) based on hydrogen-terminated diamond, surface of which is exposed to biological media. We elucidate the role of adsorbed protein layer on the electronic response of the diamond transistor. We investigate effects of cells (using mainly osteoblast cells as model) on diamond SGFETs transfer characteristics and gate currents. We employ nanocrystalline diamond (NCD) thin films of different grain sizes (80 - 250 nm) to characterize and discuss influence of grain boundaries and sp2 phase on bio- electronic function of SGFETs. We investigate effects of gamma irradiation on function and stability of hydrogen-terminated diamond SGFETs interfaced with proteins and cells, showing feasibility of...
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Graphene transfer methods for high quality graphene field effect transistors
Tesař, Jan ; Kormoš, Lukáš (referee) ; Procházka, Pavel (advisor)
This bachelor thesis is focused on the influence of different graphene transfer methods on its quality. Graphene layers were grown by Chemical Vapour Deposition (CVD) method. The quality characterization of subsequently transfered graphene is based on the measurement of charge carrier mobility which has been performed on the field-effect transistors fabricated by transferring of graphene layers onto Si/SiO$_2$ surface. Chemical etching and electrolytic delamination are the transfer methods that are being compared in this thesis. Results of the measurements showed that graphene layers transferred by electrolytic delamination exhibit approximately four times higher charge carrier mobility than those transferred by the chemical etching method.
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